Modulation doped InGaAsP quantum well laser emitting at 1.55 μm
Identifieur interne : 00FF88 ( Main/Repository ); précédent : 00FF87; suivant : 00FF89Modulation doped InGaAsP quantum well laser emitting at 1.55 μm
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Abstract
A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise, in a modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 μm have been theoretically investigated. The results indicate that the relaxation oscillation frequency for a p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of a p-type modulation doped QW laser is reduced to 1/2 that of an undoped MQW laser and the relative intensity noise is reduced by a factor of >10 dB compared to that for undoped MQW lasers. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Modulation doped InGaAsP quantum well laser emitting at 1.55 μm</title><author><name sortKey="Choudhury, N" uniqKey="Choudhury N">N. Choudhury</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Connecticut, Storrs, Connecticut 06269</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Physics, University of Connecticut, Storrs</wicri:cityArea></affiliation></author><author><name sortKey="Dutta, N K" uniqKey="Dutta N">N. K. Dutta</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Connecticut, Storrs, Connecticut 06269</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Physics, University of Connecticut, Storrs</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0260931</idno><date when="2001-07-01">2001-07-01</date><idno type="stanalyst">PASCAL 01-0260931 AIP</idno><idno type="RBID">Pascal:01-0260931</idno><idno type="wicri:Area/Main/Corpus">011082</idno><idno type="wicri:Area/Main/Repository">00FF88</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Laser noise</term><term>Quantum well lasers</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>4260M</term><term>Etude théorique</term><term>Indium composé</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term><term>Bruit laser</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise, in a modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 μm have been theoretically investigated. The results indicate that the relaxation oscillation frequency for a p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of a p-type modulation doped QW laser is reduced to 1/2 that of an undoped MQW laser and the relative intensity noise is reduced by a factor of >10 dB compared to that for undoped MQW lasers. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Modulation doped InGaAsP quantum well laser emitting at 1.55 μm</s1></fA08><fA11 i1="01" i2="1"><s1>CHOUDHURY (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>DUTTA (N. K.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Connecticut, Storrs, Connecticut 06269</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>38-42</s1></fA20><fA21><s1>2001-07-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0260931</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise, in a modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 μm have been theoretically investigated. The results indicate that the relaxation oscillation frequency for a p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of a p-type modulation doped QW laser is reduced to 1/2 that of an undoped MQW laser and the relative intensity noise is reduced by a factor of >10 dB compared to that for undoped MQW lasers. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B60M</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>4260M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Bruit laser</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Laser noise</s0></fC03><fN21><s1>176</s1></fN21><fN47 i1="01" i2="1"><s0>0125M000153</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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